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Proceedings Paper

Electronic phase transitions in transparent zinc oxide thin films
Author(s): A. R. Poghosyan; N. R. Aghamalyan; R. Guo; Y. A. Kafadaryan; R. K. Hovsepyan; S. I. Petrosyan
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Paper Abstract

The peculiarities of charge carrier transfer mechanism in ZnO films doped by donor or acceptor impurity and metal−dielectric electronic phase transition were investigated. The control parameter of this transition is concentration of interstitial Zn atoms. The films with high concentration of interstitial Zn atoms have high conductivity of metallic type. Air annealing leads to change of conductivity temperature dependence from metallic type to dielectric one.

Paper Details

Date Published: 25 September 2013
PDF: 7 pages
Proc. SPIE 8847, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII, 88471S (25 September 2013); doi: 10.1117/12.2027431
Show Author Affiliations
A. R. Poghosyan, Institute for Physical Research (Armenia)
N. R. Aghamalyan, Institute for Physical Research (Armenia)
R. Guo, The Univ. of Texas at San Antonio (United States)
Y. A. Kafadaryan, Institute for Physical Research (Armenia)
R. K. Hovsepyan, Institute for Physical Research (Armenia)
S. I. Petrosyan, Institute for Physical Research (Armenia)


Published in SPIE Proceedings Vol. 8847:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII
Shizhuo Yin; Ruyan Guo, Editor(s)

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