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Proceedings Paper

Ferroelectric memory element based on thin film field effect transistor
Author(s): A. R. Poghosyan; N. R. Aghamalyan; E. Y. Elbakyan; R. Guo; R. K. Hovsepyan
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Paper Abstract

We report the preparation and investigation of ferroelectric field effect transistors (FET) using ZnO:Li films with high field mobility of the charge carriers as a FET channel and as a ferroelectric active element simultaneously. The possibility for using of ferroelectric FET based on the ZnO:Li films in the ZnO:Li/LaB6 heterostructure as a bi-stable memory element for information recording is shown. The proposed ferroelectric memory structure does not manifest a fatigue after multiple readout of once recorded information.

Paper Details

Date Published: 25 September 2013
PDF: 7 pages
Proc. SPIE 8847, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII, 88471R (25 September 2013); doi: 10.1117/12.2027429
Show Author Affiliations
A. R. Poghosyan, Institute for Physical Research (Armenia)
N. R. Aghamalyan, Institute for Physical Research (Armenia)
E. Y. Elbakyan, Institute for Physical Research (Armenia)
R. Guo, The Univ. of Texas at San Antonio (United States)
R. K. Hovsepyan, Institute for Physical Research (Armenia)


Published in SPIE Proceedings Vol. 8847:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII
Shizhuo Yin; Ruyan Guo, Editor(s)

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