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Proceedings Paper

Measurement of EUV absorber and resist CD using spectroscopic ellipsometer
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Paper Abstract

Evaluation of lithography process or stepper involves very large quantity of CD measurements and measurement time. In this paper, we report on an application of Scatterometry based metrology for evaluation of EUV photomask lithography. Measurements were made on mask level with Ellipsometric scatterometer for develop-check CD (DCCD) and final check CD (FCCD). Calculation of scatterometer profile information was performed with in-situ library-based rigorous coupled wave analysis (RCWA) method. We characterized the CD uniformity (CDU) and metal film thickness uniformity. OCD results show that high precision CD measurement EUV absorber and resist is possible with this method. A series of simulations were also performed to investigate the feasibility of Ellipsometric scatterometry for various pitches/line CD sizes, down to 11nm half-pitch at 1x magnification. The data showed that Scatterometry provides a nondestructive and faster mean of characterizing mask CD performance for various EUV process generations.

Paper Details

Date Published: 9 September 2013
PDF: 6 pages
Proc. SPIE 8880, Photomask Technology 2013, 88800Q (9 September 2013); doi: 10.1117/12.2027231
Show Author Affiliations
Kyung M. Lee, Intel Corp. (United States)
Malahat Tavassoli, Intel Corp. (United States)
Pei-yang Yan, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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