Share Email Print
cover

Proceedings Paper

Investigation of maple-deposited DNA films for graphene-based device applications
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this study, we investigate a new technique to fabricate DNA-CTMA films with tunable properties. MAPLE is, for the first time, explored to deposit DNA-CTMA dielectric films on top of epitaxially grown graphene on silicon carbide (SiC) substrate. Silicon dioxide (SiO2) is commonly used as a gate insulator in graphene based field effect transistors (GFETs) in a top gate configuration. The high temperature deposition of SiO2 on graphene is known to cause damage to the surface of the graphene leading to poor device operation. We propose an alternative gate insulator based on a bio-organic (DNA-CTMA) material processed and deposited at room temperature (RT) using MAPLE. Hall measurements run before and after DNA-CTMA deposition showed no change in the type of conductivity as well as charge carrier mobility.

Paper Details

Date Published: 3 October 2013
PDF: 5 pages
Proc. SPIE 8817, Nanobiosystems: Processing, Characterization, and Applications VI, 88170L (3 October 2013); doi: 10.1117/12.2027218
Show Author Affiliations
Adrienne Williams, Air Force Research Lab. (United States)
Angela Campbell, Air Force Research Lab. (United States)
Fahima Ouchen, Air Force Research Lab. (United States)
Univ. of Dayton Research Institute (United States)
Weijie Lu, Air Force Research Lab. (United States)
Universal Technology Corp. (United States)
John Grant, Air Force Research Lab. (United States)
Univ. of Dayton Research Institute (United States)
James Grote, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 8817:
Nanobiosystems: Processing, Characterization, and Applications VI
Norihisa Kobayashi; Fahima Ouchen; Ileana Rau, Editor(s)

© SPIE. Terms of Use
Back to Top