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Proceedings Paper

In-die mask registration for multi-patterning
Author(s): F. Laske; S. Kunitani; T. Kamibayashi; M. Yamana; A. Fuse; M. Wagner; K.-D. Roeth; M. Ferber; M. Daneshpanah; S. Czerkas; H. Sakaguchi
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Paper Abstract

193nm immersion lithography is the mainstream production technology for the 20nm and 14nm logic nodes. Considering multi-patterning as the technology to solve the very low k1 situation in the resolution equation puts extreme pressure on the intra-field overlay, to which mask registration error is a major error contributor. The International Technology Roadmap for Semiconductors (ITRS) requests a registration error below 4 nm for each mask of a multi-patterning set forming one layer on the wafer. For mask metrology at the 20nm and 14nm logic nodes, maintaining a precision-to-tolerance (P/T) ratio below 0.25 will be very challenging. Mask registration error impacts intra-field wafer overlay directly and has a major impact on wafer yield. We will discuss a solution to support full in-die registration metrology on reticles.

Paper Details

Date Published: 16 September 2013
PDF: 8 pages
Proc. SPIE 8880, Photomask Technology 2013, 888024 (16 September 2013); doi: 10.1117/12.2027200
Show Author Affiliations
F. Laske, KLA-Tencor GmbH (Germany)
S. Kunitani, Toppan Printing Co., Ltd. (Japan)
T. Kamibayashi, Toppan Printing Co., Ltd. (Japan)
M. Yamana, Toppan Printing Co., Ltd. (Japan)
A. Fuse, Toppan Printing Co., Ltd. (Japan)
M. Wagner, KLA-Tencor Ltd. (Israel)
K.-D. Roeth, KLA-Tencor GmbH (Germany)
M. Ferber, KLA-Tencor GmbH (Germany)
M. Daneshpanah, KLA Tencor Inc. (United States)
S. Czerkas, KLA-Tencor GmbH (Germany)
H. Sakaguchi, KLA-Tencor Japan Ltd. (Japan)

Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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