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Proceedings Paper

Boron selenide semiconductor detectors for thermal neutron counting
Author(s): Alireza Kargar; Joshua Tower; Leonard Cirignano; Kanai Shah
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Paper Abstract

Thermal neutron detectors in planar configuration were fabricated from B2Se3 (Boron Selenide) crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. In this study, the resistivity of crystals is reported and the collected pulse height spectra are presented for devices irradiated with the 241AmBe neutron source. Long-term stability of the B2Se3 devices for neutron detection under continuous bias and without being under continuous bias was investigated and the results are reported. The B2Se3 devices showed response to thermal neutrons of the 241AmBe source.

Paper Details

Date Published: 26 September 2013
PDF: 9 pages
Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 88521M (26 September 2013); doi: 10.1117/12.2027078
Show Author Affiliations
Alireza Kargar, Radiation Monitoring Devices, Inc. (United States)
Joshua Tower, Radiation Monitoring Devices, Inc. (United States)
Leonard Cirignano, Radiation Monitoring Devices, Inc. (United States)
Kanai Shah, Radiation Monitoring Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 8852:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV
Michael Fiederle; Arnold Burger; Larry Franks; Ralph B. James, Editor(s)

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