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Proceedings Paper

High-performance SWIR sensing from colloidal quantum dot photodiode arrays
Author(s): Ethan Klem; Jay Lewis; Chris Gregory; Garry Cunningham; Dorota Temple; Arvind D'Souza; Ernest Robinson; P. S. Wijewarnasuriya; Nibir Dhar
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Paper Abstract

RTI has demonstrated a novel photodiode technology based on IR-absorbing solution-processed PbS colloidal quantum dots (CQD) that can overcome the high cost, limited spectral response, and challenges in the reduction in pixel size associated with InGaAs focal plane arrays. The most significant advantage of the CQD technology is ease of fabrication. The devices can be fabricated directly onto the ROIC substrate at low temperatures compatible with CMOS, and arrays can be fabricated at wafer scale. Further, device performance is not expected to degrade significantly with reduced pixel size. We present results for upward-looking detectors fabricated on Si substrates with sensitivity from the UV to ~1.7 μm, compare these results to InGaAs detectors, and present measurements of the CQD detectors temperature dependent dark current.

Paper Details

Date Published: 19 September 2013
PDF: 6 pages
Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 886806 (19 September 2013); doi: 10.1117/12.2026972
Show Author Affiliations
Ethan Klem, RTI International (United States)
Jay Lewis, RTI International (United States)
Chris Gregory, RTI International (United States)
Garry Cunningham, RTI International (United States)
Dorota Temple, RTI International (United States)
Arvind D'Souza, DRS Sensors and Targeting Systems (United States)
Ernest Robinson, DRS Sensors and Targeting Systems (United States)
P. S. Wijewarnasuriya, U.S. Army Research Lab. (United States)
Nibir Dhar, Defense Advanced Research Projects Agency (United States)


Published in SPIE Proceedings Vol. 8868:
Infrared Sensors, Devices, and Applications III
Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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