Share Email Print

Proceedings Paper

Fabrication and characterization of OTFT memory based on DNA gate dielectric
Author(s): Lijuan Liang; Tomoyashi Yukimoto; Sei Uemura; Toshihide Kamata; Kazuki Nakamura; Norihisa Kobayashi
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The bio-organic thin film transistor (BiOTFT) with the DNA and DNA-surfactant complex as a dielectric layer shows memory function. In order to investigate the effect of surfactant structure on the OTFT memory device performance, different kinds of surfactant were introduced. Cetyltrimethylammonium chloride (CTMA), Lauroylcholine chloride (Lau) or Octadecyltrimethylammonium chloride (OTMA) as the cationic surfactant was mixed with DNA to prepare the DNA complex through the electrostatic interaction. In addition, the different molecular weight DNA also has been studied to analyze the effect of DNA chain length on the performance of the physical property. Many kinds of methods including UV-vis, Circular dichiroism (CD) and I-V characteristic have been applied to analyze the property of DNA complex. In conclusion, all of DNA complex with CTMA, OTMA and Lau were revealed to work as the bio-organic thin film transistor memory, and the device fabricated by Lau has the highest ON current and showed better device performance.

Paper Details

Date Published: 1 October 2013
PDF: 9 pages
Proc. SPIE 8817, Nanobiosystems: Processing, Characterization, and Applications VI, 881705 (1 October 2013); doi: 10.1117/12.2026939
Show Author Affiliations
Lijuan Liang, Chiba Univ. (Japan)
Tomoyashi Yukimoto, Chiba Univ. (Japan)
Sei Uemura, National Institute of Advanced Industrial Science and Technology (Japan)
Toshihide Kamata, National Institute of Advanced Industrial Science and Technology (Japan)
Kazuki Nakamura, Chiba Univ. (Japan)
Norihisa Kobayashi, Chiba Univ. (Japan)

Published in SPIE Proceedings Vol. 8817:
Nanobiosystems: Processing, Characterization, and Applications VI
Norihisa Kobayashi; Fahima Ouchen; Ileana Rau, Editor(s)

© SPIE. Terms of Use
Back to Top