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Proceedings Paper

Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices
Author(s): Elizabeth H. Steenbergen; Jeremy A. Massengale; Vincent M. Cowan; Zhiyuan Lin; Yong-Hang Zhang; Christian P. Morath
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Paper Abstract

Infrared detector arrays operating in space must be able to withstand defect-inducing proton radiation without performance degradation. Therefore, it is imperative that the proton-radiation hardness of infrared detector materials be investigated. Photoluminescence (PL) is sensitive to defects in materials, and thus can be used to quantify the effects of proton-radiation-induced defects. The excitation intensity-dependent PL was used to examine of a set of InAs/InAsSb superlattices before and after 63-MeV-proton irradiation. A proton dose of 100 kRad(Si) was applied to a different piece of each superlattice sample. The low-temperature excitation intensity dependent PL results reveal minimal increases in the carrier concentration, non-radiative recombination, and the PL full-width half-maximum. These results suggest that InAs/InAsSb superlattices are quite tolerant of proton irradiation and may be suitable for space infrared detector arrays.

Paper Details

Date Published: 24 September 2013
PDF: 7 pages
Proc. SPIE 8876, Nanophotonics and Macrophotonics for Space Environments VII, 887609 (24 September 2013); doi: 10.1117/12.2026872
Show Author Affiliations
Elizabeth H. Steenbergen, Air Force Research Lab. (United States)
Jeremy A. Massengale, Air Force Research Lab. (United States)
Vincent M. Cowan, Air Force Research Lab. (United States)
Zhiyuan Lin, Arizona State Univ. (United States)
Yong-Hang Zhang, Arizona State Univ. (United States)
Christian P. Morath, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 8876:
Nanophotonics and Macrophotonics for Space Environments VII
Edward W. Taylor; David A. Cardimona, Editor(s)

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