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Proceedings Paper

Discontinuous envelope function in semiconductor heterostructures
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Paper Abstract

Based on a proper definition of the current operators for non-quadratic Hamiltonians, we derive the expression for the transport current which involves the derivative of the imaginary part of the free-electron current, highlighting peculiarities of the extra terms. The expression of the probability current, when Spin-Orbit Interaction (SOI) is taken into account, requires a reformulation of the boudary conditions. This is especially important for tunnel heterojunctions made of non-centrosymmetric semiconductors. Therefore, we consider a model case: tunneling of conduction electrons through a [110]-oriented GaAs barrier. The new boundary conditions are reduced to two set of equations: the first one expresses the discontinuity of the envelope function at the interface while the other one expresses the discontinuity of the derivative of the envelope function.

Paper Details

Date Published: 26 September 2013
PDF: 7 pages
Proc. SPIE 8813, Spintronics VI, 88132Y (26 September 2013); doi: 10.1117/12.2026511
Show Author Affiliations
Henri-Jean Drouhin, Ecole Polytechnique, CNRS (France)
CEA-IRAMIS (France)
Federico Bottegoni, Ecole Polytechnique, CNRS (France)
CEA-IRAMIS (France)
Politecnico di Milano (Italy)
T. L. Hoai Nguyen, Institute of Physics (Viet Nam)
Jean-Eric Wegrowe, Ecole Polytechnique, CNRS (France)
CEA-IRAMIS (France)
Guy Fishman, Institut d'Électronique Fondamentale, CNRS (France)


Published in SPIE Proceedings Vol. 8813:
Spintronics VI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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