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Proceedings Paper

Metrology variability and its impact in process modeling
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Paper Abstract

In electron proximity effects correction (PEC), the quality of a correction is highly dependent on the quality of the model used to compute the effects. Therefore it is of primary importance to have a reliable methodology to extract the parameters and assess the quality of a model. Usually, model calibration procedures consist of one or more cycles of exposure and measurements on the calibration stage. The process and metrology variability may play a key role in the quality of the final model and, hence, of the PEC result. Therefore, it is important to determine at which level these variations may impact a calibration procedure and how a calibration design may be implemented in order to enable more robustness to the resulting model. In this work, metrology variability was evaluated by measuring the same wafer using two different CD-SEM tools. The information coming from these analyses was used as reference to a variation induced calibration test using synthetic data. By inserting variability in synthetic data it was possible to evaluate its impact on the resulting parameter values and in the final model error evaluation.

Paper Details

Date Published: 23 September 2013
PDF: 9 pages
Proc. SPIE 8880, Photomask Technology 2013, 888020 (23 September 2013); doi: 10.1117/12.2026423
Show Author Affiliations
Thiago Figueiro, Aselta Nanographics (France)
Univ. Joseph Fourier - Grenoble, CNRS (France)
Mohamed Saib, Aselta Nanographics (France)
Kang-Hoon Choi, Fraunhofer Institute for Photonic Microsystems (Germany)
Christoph Hohle, Fraunhofer Institute for Photonic Microsystems (Germany)
Martin J. Thornton, Aselta Nanographics (France)
CEA-LETI (France)
Cyril Vannufel, CEA-LETI (France)
Jean-Hervé Tortai, Univ. Joseph Fourier - Grenoble, CNRS (France)
Patrick Schiavone, Aselta Nanographics (France)


Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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