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Proceedings Paper

Two-step growth and fabrication of thermoelectric devices employing indium phosphide nanowire networks
Author(s): Kate J. Norris; Junce Zhang; David M. Fryauf; Nobuhiko P. Kobayashi
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Paper Abstract

The ability to make a good electrical/thermal contact to a large area filled with semiconductor nanowires has been a major engineering challenge in developing this type of thermoelectric devices. A practical fabrication process of a top electrical/thermal contact onto a network of randomly oriented intersecting semiconductor nanowires was designed by implementing a sequence of two separated metal organic chemical vapor deposition processes for indium phosphide. In the first step, a nanowire network was grown on a substrate with indium phosphide nanowires grown axially. Subsequently, growth temperature and pressure were altered to change the axial growth to lateral growth that promoted the formation of indium phosphide extending over multiple nanowires. Possible growth mechanisms during the lateral growth and structural properties of the laterally grown segment will be discussed.

Paper Details

Date Published: 19 September 2013
PDF: 6 pages
Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200Q (19 September 2013); doi: 10.1117/12.2026345
Show Author Affiliations
Kate J. Norris, Univ. of California, Santa Cruz (United States)
Junce Zhang, Univ. of California, Santa Cruz (United States)
David M. Fryauf, Univ. of California, Santa Cruz (United States)
Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)


Published in SPIE Proceedings Vol. 8820:
Nanoepitaxy: Materials and Devices V
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)

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