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Proceedings Paper

Nanowires for next generation photovoltaics
Author(s): Ray R. LaPierre
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Paper Abstract

A concept for a nanowire-based photovoltaic (PV) device is presented along with the requirements for achieving high photoconversion efficiency including nanowire morphology, crystalline structure, nanowire dimensions (diameter, period (spacing) and length), avoidance of misfit dislocations, low resistance contacts, controlled doping for p-n junctions, surface passivation, and current-matching. The state of the nanowire PV device field is presented.

Paper Details

Date Published: 19 September 2013
PDF: 7 pages
Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200A (19 September 2013); doi: 10.1117/12.2026241
Show Author Affiliations
Ray R. LaPierre, McMaster Univ. (Canada)

Published in SPIE Proceedings Vol. 8820:
Nanoepitaxy: Materials and Devices V
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)

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