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Proceedings Paper

Mask contamination study in electron and ion beam repair system
Author(s): Hyo-Jin Ahn; Jong-Min Kim; Dong-Seok Lee; Gyu-Yong Lee; Dong-Heok Lee; Sang-Soo Choi
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Paper Abstract

At 32nm technology node and beyond, the number of defect to be repaired is increased because pattern size is shrunk and the detecting ability of inspection system higher than before. In repair system, mask surface is exposed to the various contaminations such as contamination from vacuum chamber wall, reaction gas for repair etc. Although contaminations deposited on mask surface are removed by followed cleaning process, it makes reflectance change on scan area detected by high resolution inspection system. This reflectance change on scan area in repair system detected during inspection is big burden for mask making because the number of scan area requires more time to confirm and need AIMS simulation if there is any issue on the area. Most of all, it is hard to find where the exact repaired pattern is and verify whether there are no problems because inspection system does not detect exact repaired pattern but detect all scan area. Especially, this phenomenon is more observed to MoSi absorber of OMOG mask. In this paper, we demonstrate the findings of contamination source and the root cause of contamination using surface analyzing methods, ToF-SIMS(Time of Flight-SIMS) and AFM(Atomic Force Microscope). In addition, preventive strategy to minimize and remove reflectance change issue in repair system will be discussed.

Paper Details

Date Published: 16 September 2013
PDF: 8 pages
Proc. SPIE 8880, Photomask Technology 2013, 88801T (16 September 2013); doi: 10.1117/12.2026123
Show Author Affiliations
Hyo-Jin Ahn, PKL Co., Ltd. (Korea, Republic of)
Jong-Min Kim, PKL Co., Ltd. (Korea, Republic of)
Dong-Seok Lee, PKL Co., Ltd. (Korea, Republic of)
Gyu-Yong Lee, PKL Co., Ltd. (Korea, Republic of)
Dong-Heok Lee, PKL Co., Ltd. (Korea, Republic of)
Sang-Soo Choi, PKL Co., Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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