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Proceedings Paper

A study of the defect detection technology using the optic simulation for the semiconductor device
Author(s): Yusin Yang; Yongdeok Jeong; Mitsunori Numata; Mira Park; Mingoo Seo; SangKil Lee; ChungSam Jun; Kyupil Lee; Insoo Cho
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Paper Abstract

In the era of sub-30nm devices, the size of the defects on semiconductor wafer has already exceeded the resolution limit of optic microscope, but we still can't help using optical inspection tools. Therefore, the contrast enhancement technique is more useful rather than the resolution itself. The best contrast can be taken by the optimized light conditions such as wavelength, polarization, incidence angle and so on. However these kinds of parameters are not easily estimated intuitively because they are strongly dependent on the pattern structures and materials. In this paper, we propose a simulation methodology to find those optic conditions to detect sub 20nm defect. The simulation is based on FDTD (Finite Difference Time Domain) calculation and Fourier optics.

Paper Details

Date Published: 9 September 2013
PDF: 8 pages
Proc. SPIE 8880, Photomask Technology 2013, 88801S (9 September 2013); doi: 10.1117/12.2025977
Show Author Affiliations
Yusin Yang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yongdeok Jeong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Mitsunori Numata, Samsung Yokohama Research Institute Co., Ltd. (Japan)
Mira Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Mingoo Seo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
SangKil Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
ChungSam Jun, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kyupil Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Insoo Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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