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Proceedings Paper

Implementable and systematic mitigation of native defects in EUV masks
Author(s): Wen-Chang Hsueh; Li-Chih Yeh; Ming-Jiun Yao; Yun-Yue Lin; Jia-Jen Chen; Shin-Chang Lee; Anthony Yen
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Paper Abstract

Native defects in mask blanks is one of the key issues in extreme ultraviolet lithography. If defect-free mask blanks is the only solution, the resulting cost will be very high due to the low yield of such blanks. In this paper, we present a method for fabricating defect-free-like EUV masks by implementing several novel techniques such as global pattern shift, fine metrology-orientation and precise e-beam second-alignment from blank preparation to e-beam exposure. The mitigation success rate versus mask pattern density is simulated and verified by lithographic results using mitigated masks. Our methodology provides a way to achieve defect-free-like EUV mask blanks.

Paper Details

Date Published: 9 September 2013
PDF: 10 pages
Proc. SPIE 8880, Photomask Technology 2013, 88800Y (9 September 2013); doi: 10.1117/12.2025786
Show Author Affiliations
Wen-Chang Hsueh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Li-Chih Yeh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Ming-Jiun Yao, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yun-Yue Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jia-Jen Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shin-Chang Lee, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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