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Proceedings Paper

Photoinduced inverse spin-Hall effect in Pt/GaAs and Pt/Ge
Author(s): F. Bottegoni; A. Ferrari; G. Isella; S. Cecchi; M. Finazzi; F. Ciccacci
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Paper Abstract

We performed photoinduced inverse spin Hall effect (ISHE) measurements on Pt/GaAs(001) and Pt/Ge(001) junctions at room temperature. The spin-oriented electrons, photogenerated at the direct gap of the semiconductor using circularly polarized light, provide a net spin current which yields an electromotive field EISHE in the Pt layer. Such a signal is clearly detected in GaAs, where electrons diffuse around the Γ point of the Brillouin zone, and also in Ge, despite the strong Γ to L scattering which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is investigated in both junctions.

Paper Details

Date Published: 26 September 2013
PDF: 8 pages
Proc. SPIE 8813, Spintronics VI, 88131C (26 September 2013); doi: 10.1117/12.2025497
Show Author Affiliations
F. Bottegoni, Politecnico di Milano (Italy)
A. Ferrari, Politecnico di Milano (Italy)
G. Isella, Politecnico di Milano (Italy)
S. Cecchi, Politecnico di Milano (Italy)
M. Finazzi, Politecnico di Milano (Italy)
F. Ciccacci, Politecnico di Milano (Italy)

Published in SPIE Proceedings Vol. 8813:
Spintronics VI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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