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Proceedings Paper

A study on the ESD damage of a silicon oxy-nitride hard mask on the chromium surface of PSM blank
Author(s): Songbae Moon; Heebom Kim; Inkyun Shin; Chanuk Jeon
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Paper Abstract

A thin silicon oxy-nitride hard mask on the PSM blank is needed for the feature patterning with the size smaller than 70 nm. It is a good material for hard mask. However, the electrical property of silicon oxy-nitride with the thickness smaller than 10 nm causes the chromium surface damage during the mask processes. From the measurement of the surface damage, we figure out that the chromium surface damage is originated from the charging and the dielectric breakdown phenomena. In our present work, two types of silicon oxy-nitride film with the thicknesses of 5 nm and 12 nm are tested for verifying optimal mask fabrication processes. We find that the occurrence of ESD damage is related to the thickness of silicon oxy-nitride hard mask and mask fabrication process conditions. The optimal fabrication process condition for silicon oxy-nitride thin film hard mask, in which break-down never occurs, is discussed.

Paper Details

Date Published: 1 October 2013
PDF: 5 pages
Proc. SPIE 8880, Photomask Technology 2013, 88801N (1 October 2013); doi: 10.1117/12.2025457
Show Author Affiliations
Songbae Moon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Heebom Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Inkyun Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chanuk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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