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Proceedings Paper

PbS quantum dot thin film solar cells using a CdS window layer
Author(s): Khagendra P. Bhandari; Hasitha Mahabaduge; Jianbo Gao; Randy J. Ellingson
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Paper Abstract

We describe results of our investigations of the structural, optical, and electronic properties of PbS-QD films fabricated using layer-by-layer dip coating based on 1,2-ethanedithiol as an insolubilizing agent. Our investigations extend to a study of the photovoltaic properties of heterojunction thin film solar cells fabricated by sputter-deposition of a CdS ntype thin film followed by deposition of a PbS-QD thin film. Our CdS/PbS-QD solar cells exhibit open circuit voltage in excess of previously reported PbS-QD solar cells. Under standard simulated AM1.5G illumination, we observe short circuit current density as high as 12 mA cm-2, open circuit voltage as high as 0.65 V, and a maximum efficiency of 3.3%.

Paper Details

Date Published: 25 September 2013
PDF: 9 pages
Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, 88240I (25 September 2013); doi: 10.1117/12.2025307
Show Author Affiliations
Khagendra P. Bhandari, The Univ. of Toledo (United States)
Hasitha Mahabaduge, The Univ. of Toledo (United States)
Jianbo Gao, National Renewable Energy Lab. (United States)
Randy J. Ellingson, The Univ. of Toledo (United States)


Published in SPIE Proceedings Vol. 8824:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV
Oleg V. Sulima; Gavin Conibeer, Editor(s)

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