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Proceedings Paper

All-semiconductor plasmonics for mid-IR applications
Author(s): T. Taliercio; V. Ntsame Guilengui; L. Cerutti; J. B. Rodriguez; E. Tournié
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Paper Abstract

We investigate highly doped InAsSb layers grown by molecular beam epitaxy on GaSb substrates. Electrical and optical characterizations demonstrate a metallic behavior with the possibility to control the plasma frequency in the mid-infrared range by adjusting the doping level. Plasmonic resonators based on this new kind of metal can be realized for mid-IR applications. Sub-wavelength periodic arrays are fabricated in the InAsSb layer and localized surface plasmon resonances are observed in reflectance experiments. A perfect control of the doping level and of the geometry of the periodic arrays allows adjusting the frequency of the plasmonic resonances. Our work shows that GaSb-based materials could be the building block for all-semiconductor mid-infrared plasmonic devices.

Paper Details

Date Published: 13 September 2013
PDF: 9 pages
Proc. SPIE 8807, Nanophotonic Materials X, 880702 (13 September 2013); doi: 10.1117/12.2025260
Show Author Affiliations
T. Taliercio, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
V. Ntsame Guilengui, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
L. Cerutti, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
J. B. Rodriguez, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
E. Tournié, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)


Published in SPIE Proceedings Vol. 8807:
Nanophotonic Materials X
Stefano Cabrini; Gilles Lérondel; Adam M. Schwartzberg; Taleb Mokari, Editor(s)

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