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Proceedings Paper

High-operating-temperature MWIR detectors using type II superlattices
Author(s): Z.-B. Tian; T. Schuler-Sandy; S. E. Godoy; H. S. Kim; S. Krishna
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Paper Abstract

There is an increasing interest in the development of high operating temperature (HOT) detectors with InAs/Ga(In)Sb Type-II superlattice (T2-SL) material systems. A wide variety of unipolar barrier structures have been investigated and successfully implemented in low-noise device architectures. In this paper, some of our recent work on the development of HOT mid-IR (MWIR) T2-SL photodetectors with interband cascade schemes will be summarized. In these structures, the discrete InAs/GaSb SL absorbers are sandwiched between quantum-engineered electron and hole barriers, which facilitate photovoltaic operation and efficient photo-carrier extraction. Even at its initial stage of development, such an advanced design has led to the demonstration of mid-IR photodetectors with background-limited operation above 150 K (300 K, 2π field-of-view), as well as above room temperature zero-bias operation. Further understanding of the device operation and design principles will also be discussed.

Paper Details

Date Published: 19 September 2013
PDF: 9 pages
Proc. SPIE 8867, Infrared Remote Sensing and Instrumentation XXI, 88670S (19 September 2013); doi: 10.1117/12.2024587
Show Author Affiliations
Z.-B. Tian, The Univ. of New Mexico (United States)
T. Schuler-Sandy, The Univ. of New Mexico (United States)
S. E. Godoy, The Univ. of New Mexico (United States)
H. S. Kim, The Univ. of New Mexico (United States)
S. Krishna, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 8867:
Infrared Remote Sensing and Instrumentation XXI
Marija Strojnik Scholl; Gonzalo Páez, Editor(s)

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