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Proceedings Paper

Magnetic field controlled reconfigurable logic gates with integrated nanomagnets
Author(s): Mark Johnson; Jindong Song; Jinki Hong; Joonyeon Chang
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Paper Abstract

We describe the development of a magnetic logic device that is uniquely different from spintronic approaches based on magnetoresistive effects that derive from spin dependent transport of carriers. The core of our device is a thin film avalanche diode channel fabricated as a p-n bilayer. Because of the structural asymmetry, the carriers are sensitive to an in-plane magnetic field and the diode has a large magnetoresistance. We characterize our device as a current switch. The high- and low-current states are well defined and are determined by the magnetic field. Positive or negative field orientation with constant field strength is an appropriate selector. We then describe an integrated avalanche diode logic device in which the magnetic field is provided by the local fringe field from a patterned ferromagnetic film with nanometer dimensions. The magnetization orientation of the nanomagnet, and the sign of the magnetic field, is set by spin torque transfer (STT) using small amplitude current pulses. We describe how simple arrangements of these integrated devices can be used as dynamically reconfigurable logic gates. Reconfigurable Boolean AND/OR gates using early prototype structures with micron dimensions are shown. Scaling arguments that justify the plausibility of fabricating an integrated device with dimensions of 100 nm are presented. These arguments suggest that such a device could produce an output current driving STT write processes and provide fanout capability in an integrated network.

Paper Details

Date Published: 26 September 2013
PDF: 9 pages
Proc. SPIE 8813, Spintronics VI, 88132J (26 September 2013); doi: 10.1117/12.2024409
Show Author Affiliations
Mark Johnson, U.S. Naval Research Lab. (United States)
Jindong Song, Korea Institute of Science and Technology (Korea, Republic of)
Jinki Hong, Korea Univ. (Korea, Republic of)
Joonyeon Chang, Korea Institute of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 8813:
Spintronics VI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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