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Proceedings Paper

Single-polycrystalline core-shell silicon nanowires grown on copper
Author(s): Kate J. Norris; Junce Zhang; David M. Fryauf; Elane Coleman; Gary S. Tompa; Nobuhiko P. Kobayashi
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Paper Abstract

The growth of silicon core-shell nanowires with a crystalline-core and a polycrystalline-shell on copper substrates pretreated with carbon via Plasma Enhanced Chemical Vapor Deposition (PECVD) was demonstrated. The nanowire diameters range from 120 to 250nm with 10-20nm crystalline cores. The overall large diameter enables easier methods of forming an electrical/thermal contact while the small core maintains the benefits of nanowires. By altering the copper surface with carbon, highly dense silicon nanowire networks can be directly grown on copper substrates, which could allow for efficient and economical incorporation of silicon nanowires into such applications as thermoelectric devices.

Paper Details

Date Published: 19 September 2013
PDF: 7 pages
Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 882013 (19 September 2013); doi: 10.1117/12.2024283
Show Author Affiliations
Kate J. Norris, Univ. of California, Santa Cruz (United States)
Junce Zhang, Univ. of California, Santa Cruz (United States)
David M. Fryauf, Univ. of California, Santa Cruz (United States)
Elane Coleman, Structured Materials Industries, Inc. (United States)
Gary S. Tompa, Structured Materials Industries, Inc. (United States)
Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)


Published in SPIE Proceedings Vol. 8820:
Nanoepitaxy: Materials and Devices V
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)

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