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Proceedings Paper

Nanowires from dirty multi-crystalline Si for hydrogen generation
Author(s): Xiaopeng Li; Stefan L. Schweizer; Alexander Sprafke; Ralf B. Wehrspohn
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Paper Abstract

Silicon nanowires are considered as a promising architecture for solar energy conversion systems. By metal assisted chemical etching of multi-crystalline upgraded metallurgical silicon (UMG-Si), large areas of silicon nanowires (SiNWs) with high quality can be produced on the mother substrates. These areas show a low reflectance comparable to black silicon. More interestingly, we find that various metal impurities inside UMG-Si are removed due to the etching through element analysis. A prototype cell was built to test the photoelectrochemical (PEC) properties of UMG-SiNWs for water splitting. The on-set potential for hydrogen evolution was much reduced, and the photocurrent density showed an increment of 35% in comparison with a ‘dirty’ UMG-Si wafer.

Paper Details

Date Published: 16 September 2013
PDF: 8 pages
Proc. SPIE 8822, Solar Hydrogen and Nanotechnology VIII, 88220U (16 September 2013); doi: 10.1117/12.2024231
Show Author Affiliations
Xiaopeng Li, Univ. Halle-Wittenberg (Germany)
Max-Planck-Instute of Microstructure Physics (Germany)
Stefan L. Schweizer, Univ. Halle-Wittenberg (Germany)
Alexander Sprafke, Univ. Halle-Wittenberg (Germany)
Ralf B. Wehrspohn, Univ. Halle-Wittenberg (Germany)
Fraunhofer Institute for Mechanics of Materials (Germany)


Published in SPIE Proceedings Vol. 8822:
Solar Hydrogen and Nanotechnology VIII
Yosuke Kanai; David Prendergast, Editor(s)

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