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Proceedings Paper

The dynamic range of THz broadband FET detectors
Author(s): D. B. But; N. Diakonova; C. Drexler; O. Drachenko; K. Romanov; O. G. Golenkov; F. F. Sizov; A. Gutin; M. Shur; S. D. Ganichev; W. Knap
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Paper Abstract

Field effect transistors are promising detectors of THz radiation. They operate at room temperatures have high responsivity, low noise equivalent power, and fast response time. However, their linearity (dynamic range) and possibility of their application in the domain of high power radiation has not been yet sufficiently studied. We have investigated room temperature field effect transistors, detection at frequencies from 0.3 to 3 THz with power up to 100 kW/cm2. Several types of HEMTs and MOSFETs operating in the broadband non resonant detection regime, have been investigated. To provide a wide range of incident THz radiation intensities we used continuous-wave and pulsed sources: backward oscillators, CO2 pumped methanol laser, free electron laser, NH3, D2O, and CH3F lasers. We find that the photoresponse of HEMTs and MOSFETs is linear in radiation intensity up to a several kW/cm2 and then it saturates. The onset of the saturation depends on the radiation frequency and the transistor type. The observed saturation behavior can not be explained by the existing theoretical model which predict a square root like dependence of the photoresponse. We tentatively attribute the unusual features of the photoresponse saturation observed at high intensities considering high electric field transport phenomena, e.g., electron heating and electron velocity saturation.

Paper Details

Date Published: 24 September 2013
PDF: 7 pages
Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 884612 (24 September 2013); doi: 10.1117/12.2024226
Show Author Affiliations
D. B. But, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
N. Diakonova, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
C. Drexler, Univ. Regensburg (Germany)
O. Drachenko, Helmholtz Zentrum Dresden Rossendorf (Germany)
K. Romanov, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
O. G. Golenkov, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
F. F. Sizov, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
A. Gutin, Rensselaer Polytechnic Institute (United States)
M. Shur, Rensselaer Polytechnic Institute (United States)
S. D. Ganichev, Univ. Regensburg (Germany)
W. Knap, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)


Published in SPIE Proceedings Vol. 8846:
Terahertz Emitters, Receivers, and Applications IV
Manijeh Razeghi; Alexei N. Baranov; John M. Zavada, Editor(s)

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