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Proceedings Paper

Nanotransistor based THz plasma detectors: low tempeatures, graphene, linearity, and circular polarization studies
Author(s): W. Knap; D. But; N. Diakonova; D. Coquillat; M. S. Vitiello; S. Blin; A. El Fatimy; F. Teppe; A. Tredicucci; T. Nagatsuma; S. Ganichev
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Paper Abstract

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the low temperatures operation, linearity, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed.

Paper Details

Date Published: 24 September 2013
PDF: 13 pages
Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 88460M (24 September 2013); doi: 10.1117/12.2024206
Show Author Affiliations
W. Knap, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
Institute of High Pressure Physics (Poland)
D. But, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
N. Diakonova, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
D. Coquillat, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
M. S. Vitiello, Istituto Nanoscienze, CNR, Scuola Normale Superiore (Italy)
S. Blin, Institut d'Électronique du Sud, CNRS, Univ. Montpellier 2 (France)
A. El Fatimy, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
F. Teppe, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
A. Tredicucci, Istituto Nanoscienze, CNR, Scuola Normale Superiore (Italy)
T. Nagatsuma, Osaka Univ. (Japan)
S. Ganichev, Univ. Regensburg (Germany)


Published in SPIE Proceedings Vol. 8846:
Terahertz Emitters, Receivers, and Applications IV
Manijeh Razeghi; Alexei N. Baranov; John M. Zavada, Editor(s)

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