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Proceedings Paper

Surface photovoltage as a tool to monitor the effect of hydrogen treatment on a-Si:H/c-Si heterojunction
Author(s): L. Martini; L. Serenelli; R. Asquini; D. Caputo; G. de Cesare; M. Izzi; M. Tucci
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Paper Abstract

The amorphous/crystalline silicon technology has demonstrated its potentiality leading to high efficiency solar cells. We propose the use of surface photovoltage technique as a contact-less tool for the evaluation of the energetic distribution of the state density at amorphous/crystalline silicon interface. We investigate the effect hydrogen plasma treatments performed on thin amorphous silicon buffer layer deposited over crystalline silicon surface and we compare its effect with that of thermal annealing on the interface. The surface photovoltage technique results to be very sensitive to the different experimental treatments, and therefore it can be considered a precious tool to monitor and improve the interface electronic quality.

Paper Details

Date Published: 11 September 2013
PDF: 10 pages
Proc. SPIE 8823, Thin Film Solar Technology V, 88230U (11 September 2013); doi: 10.1117/12.2024178
Show Author Affiliations
L. Martini, Univ. degli Studi di Roma La Sapienza (Italy)
L. Serenelli, ENEA Research Ctr. Casaccia (Italy)
R. Asquini, Univ. degli Studi di Roma La Sapienza (Italy)
D. Caputo, Univ. degli Studi di Roma La Sapienza (Italy)
G. de Cesare, Univ. degli Studi di Roma La Sapienza (Italy)
M. Izzi, ENEA Research Ctr. Casaccia (Italy)
M. Tucci, ENEA Research Ctr. Casaccia (Italy)


Published in SPIE Proceedings Vol. 8823:
Thin Film Solar Technology V
Louay A. Eldada; Michael J. Heben, Editor(s)

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