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Proceedings Paper

Two-dimensional analytical modeling of non-linear charge injection in bottom-contact organic field-effect transistors
Author(s): Franziska Hain; Michael Graef; Thomas Holtij; Alexander Kloes; Benjamin Iñiguez
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Paper Abstract

In this paper we present a 2D analytical model for the potential and the electric eld in bottom-contact organic eld-e ect transistors (OFETs) and an approach for calculation of the tunneling and thermionic source and drain injection current. The electrostatics are analytically calculated by solving the Poisson equation via the conformal mapping technique, based on that the currents were computed. Typical OFET behaviors like nonlinear injection and s-like shape are clearly visible. The model is compared with devices simulated by TCAD Sentaurus for various geometrical parameters.

Paper Details

Date Published: 18 September 2013
PDF: 9 pages
Proc. SPIE 8831, Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, 883118 (18 September 2013); doi: 10.1117/12.2024117
Show Author Affiliations
Franziska Hain, Technische Hochschule Mittelhessen (Germany)
Univ. Rovira i Virgili (Spain)
Michael Graef, Technische Hochschule Mittelhessen (Germany)
Univ. Rovira i Virgili (Spain)
Thomas Holtij, Technische Hochschule Mittelhessen (Germany)
Univ. Rovira i Virgili (Spain)
Alexander Kloes, Technische Hochschule Mittelhessen (Germany)
Benjamin Iñiguez, Univ. Rovira i Virgili (Spain)


Published in SPIE Proceedings Vol. 8831:
Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI
Zhenan Bao; Ruth Shinar; Ioannis Kymissis; Iain McCulloch, Editor(s)

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