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Proceedings Paper

Spins in silicon MOSFETs: electron spin relaxation and hyperpolarization of nuclear spins
Author(s): C. C. Lo; C. D. Weis; J. van Tol; J. Bokor; T. Schenkel; J. J. L. Morton
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Paper Abstract

The spin degree of freedom of both mobile and localized electrons in silicon have extraordinary long spin relaxation times, making silicon an attractive candidate for spintronics applications and quantum information processing. In this talk, we will discuss recent results in measuring the conduction electron spin relaxation and coherence times in silicon MOS systems using electrically detected magnetic resonance. We will also discuss an all-electrical donor nuclear spin polarization method in silicon by exploiting the tunable interaction of donor bound electrons with conduction electrons, demonstrating that donor nuclear spins can be initialized through local gate control of electrical currents without the need for optical excitation.

Paper Details

Date Published: 26 September 2013
PDF: 9 pages
Proc. SPIE 8813, Spintronics VI, 88132X (26 September 2013); doi: 10.1117/12.2023595
Show Author Affiliations
C. C. Lo, Univ. College London (United Kingdom)
C. D. Weis, Lawrence Berkeley National Lab. (United States)
J. van Tol, National High Magnetic Field Lab. (United States)
J. Bokor, Univ. of California, Berkeley (United States)
T. Schenkel, Lawrence Berkeley National Lab. (United States)
J. J. L. Morton, Univ. College London (United Kingdom)


Published in SPIE Proceedings Vol. 8813:
Spintronics VI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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