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Proceedings Paper

Characterization of CdTe and (CdZn)Te detectors with different metal contacts
Author(s): J. Pekárek; E. Belas; R. Grill; Š. Uxa; R. B. James
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Paper Abstract

In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

Paper Details

Date Published: 26 September 2013
PDF: 6 pages
Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 88521F (26 September 2013); doi: 10.1117/12.2023233
Show Author Affiliations
J. Pekárek, Charles Univ. (Czech Republic)
E. Belas, Charles Univ. (Czech Republic)
R. Grill, Charles Univ. (Czech Republic)
Š. Uxa, Charles Univ. (Czech Republic)
R. B. James, Brookhaven National Lab. (United States)


Published in SPIE Proceedings Vol. 8852:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV
Michael Fiederle; Arnold Burger; Larry Franks; Ralph B. James, Editor(s)

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