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Proceedings Paper

Flexible transistor active matrix array with all screen-printed electrodes
Author(s): Boyu Peng; Jiawei Lin; Paddy K. L. Chan
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Paper Abstract

Flexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm2V-1 s-1), large on/off ratio (< 106) and low leakage current (~10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm2V-1s-1 and on/off ratio larger than 104 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications.

Paper Details

Date Published: 18 September 2013
PDF: 7 pages
Proc. SPIE 8831, Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, 883116 (18 September 2013); doi: 10.1117/12.2022621
Show Author Affiliations
Boyu Peng, The Univ. of Hong Kong (Hong Kong, China)
Jiawei Lin, The Univ. of Hong Kong (Hong Kong, China)
Paddy K. L. Chan, The Univ. of Hong Kong (Hong Kong, China)


Published in SPIE Proceedings Vol. 8831:
Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI
Zhenan Bao; Iain McCulloch; Ruth Shinar; Ioannis Kymissis, Editor(s)

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