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Proceedings Paper

Simulation and experimental results in O.6-um lithography using an I-line stepper
Author(s): Joachim J. Bauer; Wolfgang Mehr; Ulrich Glaubitz; H. Baborski; Norbert Haase; Jens-Ullrich Mueller
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Paper Abstract

In this paper a comparison of modeling and experimental results is given. It uses a new 5x iline projection aligner from CarlZeiss JENA (NA 0. 35). The spectral bandwidth is 11. 4 nm The photoresist (ORWO) was developed from Fotochemische Werke Berlin. The resistthickness is 1. 2 um. It was used a newly developed threedimensional lithography simulator. We have simulated and produced 0. 6 um lines and spaces. 1.

Paper Details

Date Published: 1 June 1990
PDF: 15 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20222
Show Author Affiliations
Joachim J. Bauer, Institut fuer Halbleiterphysik (Germany)
Wolfgang Mehr, Institut fuer Halbleiterphysik (Germany)
Ulrich Glaubitz, Institut fuer Halbleiterphysik (Germany)
H. Baborski, VEB Forschungszentrum Mikroelektronik (Germany)
Norbert Haase, VEB Forschungszentrum Mikroelektronik (Germany)
Jens-Ullrich Mueller, VEB Carl Zeiss (Germany)

Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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