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Proceedings Paper

CIGS thin film solar cell prepared by reactive co-sputtering
Author(s): Jeha Kim; Ho-Sub Lee; Nae-Man Park
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Paper Abstract

The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.

Paper Details

Date Published: 11 September 2013
PDF: 6 pages
Proc. SPIE 8823, Thin Film Solar Technology V, 882303 (11 September 2013); doi: 10.1117/12.2021851
Show Author Affiliations
Jeha Kim, Cheongju Univ. (Korea, Republic of)
Ho-Sub Lee, Electronics and Telecommunications Research Institute (Korea, Republic of)
Nae-Man Park, Electronics and Telecommunications Research Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 8823:
Thin Film Solar Technology V
Louay A. Eldada; Michael J. Heben, Editor(s)

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