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Proceedings Paper

4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV, and soft x-ray detection: design, technology, and performance testing
Author(s): František Dubecký; Jaroslav Kováč; Bohumír Zaťko; Jirí Oswald; Pavel Hubík; Dobroslav Kindl; Gabriel Vanko; Enos Gombia; Claudio Ferrari; Pavol Boháček; Andrea Šagátová; Vladimír Nečas; Mária Sekáčová
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Paper Abstract

Work reports on results in development of 4H-SiC and semi-insulating (SI) GaAs large area surface barrier detectors. 4H-SiC detectors are based on high purity liquid phase epitaxy layer with the Schottky barrier contact formed by semitransparent Ni. SI GaAs detectors are based on bulk undoped material using novel electrode metallization with improved sensitivity in UV and soft X-ray ranges. The novel detector use semitransparent low work function Mg metal contact giving a new electronic characteristic of the junction. Electrical characteristics of the diodes, photocurrent measurements and pulse height spectra of gamma and low energy X-rays using the 241Am source, are presented. Improvement of 4H-SiC detector resistance to gamma radiation and neutron fluency is demonstrated. Problems with design and application of related ultra-low noise electronics are introduced and discussed.

Paper Details

Date Published: 3 May 2013
PDF: 7 pages
Proc. SPIE 8777, Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III, 87771K (3 May 2013); doi: 10.1117/12.2021729
Show Author Affiliations
František Dubecký, Institute of Electrical Engineering, Slovak Academy of Sciences (Slovakia)
Jaroslav Kováč, Slovak Univ. of Technology (Slovakia)
Bohumír Zaťko, Institute of Electrical Engineering, Slovak Academy of Sciences (Slovakia)
Jirí Oswald, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Pavel Hubík, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Dobroslav Kindl, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Gabriel Vanko, Institute of Electrical Engineering, Slovak Academy of Sciences (Slovakia)
Enos Gombia, CNR, Istituto Materiali per Elettronica e Magnetismo (Italy)
Claudio Ferrari, CNR, Istituto Materiali per Elettronica e Magnetismo (Italy)
Pavol Boháček, Institute of Electrical Engineering, Slovak Academy of Sciences (Slovakia)
Andrea Šagátová, Slovak Univ. of Technology (Slovakia)
Vladimír Nečas, Slovak Univ. of Technology (Slovakia)
Mária Sekáčová, Institute of Electrical Engineering, Slovak Academy of Sciences (Slovakia)


Published in SPIE Proceedings Vol. 8777:
Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III
Libor Juha; Saša Bajt; Richard London; René Hudec; Ladislav Pina, Editor(s)

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