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Proceedings Paper

PS-b-PHEMA: synthesis, characterization, and processing of a high X polymer for directed self-assembly lithography
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Paper Abstract

As an alternative lithography technique, directed self-assembly (DSA) of block copolymers has shown to be promising for next generation high resolution patterning. PS-b-PMMA has been widely studied for its use as a block copolymer in directed self-assembly and has demonstrated patterned features down to size scales on the order of 20 nm pitch. However, due to the modest χ value for PS-b-PMMA (χ=0.038), this 20 nm feature pitch representes roughly the limiting capability of PS-b-PMMA. To achieve smaller pitch features, new block copolymers with higher χ values must be developed for use in DSA lithography. Here, poly(styrene)-b-poly(hydroxyehtylmethacrylate) or PS-b-PHEMS is introduced as one possible such high χ polymer. PS-b-PHEMA with controlled Mw and PDI was successfully synthesized via ATRP and fully characterized by NMR, GPC and FTIR. As a first demonstration of sub-20 nm pitch capability in PS-b-PHEMA, a 15 nm pitch size lamella structure in PS-b-PHEMA is shown. PS-b-PHEMA has good thermal stability, allowing it to be rapidly annealed thermally. PS-b-PHEMA also is shown to have improved etch contrast between the two blocks as compared to PS-b-PMMA. The χ value for PS-b-PHEMA is estimated to be 0.37 based on experimental pitch scaling studies, which is almost 10 times of the χ value for PS-b-PMMA.

Paper Details

Date Published: 5 April 2013
PDF: 7 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801W (5 April 2013); doi: 10.1117/12.2021417
Show Author Affiliations
Jing Cheng, Georgia Institute of Technology (United States)
Richard A. Lawson, Georgia Institute of Technology (United States)
Wei-Ming Yeh, Georgia Institute of Technology (United States)
Nathan D. Jarnagin, Georgia Institute of Technology (United States)
Laren M. Tolbert, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)

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