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Proceedings Paper

Quantitative evaluation method for practical resolution by integration factor in optical lithography
Author(s): Hiroshi Ohtsuka; Kazutoshi Abe; Takeshi Taguchi
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Paper Abstract

The requirement for the accurate evaluation of the practical resolution is increased to determine the effective range for pattern generation on actual devices. In the most of evaluation method the area of focus and exposure latitude for the CD control is applied to indicate the degree of practical resolution capability to the specified CD tolerance. However the evaluation results of arbitral pattern size is directly indicated as the resolution of mask dimension regardless to the existence of transfer bias and this indication produces the difference of pattern density between mask and resist. In this paper the requirement of optimization for objective CD is demonstrated from the relationship of transfer bias and pattern density by using of the simplified evaluation method of Focus Exposure Triangle. And finally the more accurate evaluation results are obtained by correcting the pattern density to the mask applying the new determination method for the optimum transfer bias correction. 1 .

Paper Details

Date Published: 1 June 1990
PDF: 8 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20214
Show Author Affiliations
Hiroshi Ohtsuka, Oki Electric Industry Co., Ltd (Japan)
Kazutoshi Abe, Oki Electric Industry Co., Ltd (Japan)
Takeshi Taguchi, Oki Electric Industry Co., Ltd (Japan)

Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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