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Proceedings Paper

Higher quantum efficiency GaAs photocathode material with exponential-doping structure
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Paper Abstract

To improve the performance of GaAs NEA photocathodes, an exponential-doping structure GaAs material has been put forward, in which from the GaAs bulk-to-surface doping concentration is distributed exponentially from high to low. We apply this exponential-doping GaAs structure to the transmission-mode GaAs photocathodes. This sample was grown on the high quality p-type Be-doped GaAs (100) substrate by MBE. We have calculated the band-bending energy in exponential-doping GaAs emission-layer, and the total band-bending energy is 59 meV which helps to improve the photoexcited electrons movement towards surface for the thin epilayer. The integrated sensitivity of the exponential-doping GaAs photocathode samples reaches 1547uA/lm.

Paper Details

Date Published: 4 March 2013
PDF: 5 pages
Proc. SPIE 8761, PIAGENG 2013: Image Processing and Photonics for Agricultural Engineering, 87610W (4 March 2013); doi: 10.1117/12.2020136
Show Author Affiliations
Huailin Chen, Nanjing Univ. of Science and Technology (China)
Wenzheng Yang, Xi'an Institute of Optics and Precision Mechanics (China)
Weidong Tang, Xi'an Institute of Optics and Precision Mechanics (China)
Xiaoqian Fu, Nanjing Univ. of Science and Technology (China)
Yujie Du, Nanjing Univ. of Science and Technology (China)
Junju Zhang, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8761:
PIAGENG 2013: Image Processing and Photonics for Agricultural Engineering
Honghua Tan, Editor(s)

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