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Proceedings Paper

Laser-induced damage thresholds at different temperature for optical devices
Author(s): Katsuhiro Mikami; Shinji Motokoshi; Toshihiro Somekawa; Takahisa Jitsuno; Masayuki Fujita; Kazuo A. Tanaka
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Paper Abstract

Studies for temperature dependences of laser-induced damage thresholds for optical devise is introduced in this paper. Additionally, the temperature dependence of the laser-induced damage threshold of single-layer optical coatings as resent progress was clarified using Nd:YAG and Ti:sapphire lasers. The wavelengths of the lasers were 1064 nm and 800 nm and the pulse widths were 4 ns, 200 ps, 2 ps, and 100 fs. For pulses longer than a few picoseconds, the laser-induced damage threshold of coated substrates increased with decreasing temperature. This temperature dependence was reversed for pulses shorter than a few picoseconds. A flowchart was presented including the several mechanisms for laser damage mechanism. The differences in the temperature dependence are explained by the flowchart. As one of results in theoretical analysis, the electron resistivity i. e. electron mobility is key point to elucidate the temperature dependence of laser-induced damage threshold.

Paper Details

Date Published: 19 July 2013
PDF: 9 pages
Proc. SPIE 8786, Pacific Rim Laser Damage 2013: Optical Materials for High Power Lasers, 87861J (19 July 2013); doi: 10.1117/12.2019870
Show Author Affiliations
Katsuhiro Mikami, Osaka Univ. (Japan)
Shinji Motokoshi, Institute for Laser Technology (Japan)
Toshihiro Somekawa, Institute for Laser Technology (Japan)
Takahisa Jitsuno, Osaka Univ. (Japan)
Masayuki Fujita, Institute for Laser Technology (Japan)
Kazuo A. Tanaka, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 8786:
Pacific Rim Laser Damage 2013: Optical Materials for High Power Lasers
Jianda Shao; Takahisa Jitsuno; Wolfgang Rudolph, Editor(s)

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