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Proceedings Paper

High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices
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Paper Abstract

Active and passive imaging in a single camera based on the combination of short-wavelength and mid-wavelength infrared detection is highly needed in a number of tracking and reconnaissance missions. Due to its versatility in band-gap engineering, Type-II InAs/GaSb/AlSb superlattice has emerged as a candidate highly suitable for this multi-spectral detection. In this paper, we report the demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattice with designed cut-off wavelengths of 2 μm and 4 μm. Taking advantages of the high performance short-wavelength and mid-wavelength single color photodetectors, back-to-back p-i-n-n-i-p photodiode structures were grown on GaSb substrate by molecular beam epitaxy. At 150 K, the short-wave channel exhibited a quantum efficiency of 55%, a dark current density of 1.0x10-9 A/cm2 at -50 mV bias voltage, providing an associated shot noise detectivity of 3.0x1013 Jones. The mid-wavelength channel exhibited a quantum efficiency of 33% and a dark current density of 2.6x10-5 A/cm2 at 300 mV bias voltage, resulting in a detectivity of 4.0x1011 Jones. The operations of the two absorber channels are selectable by changing the polarity of applied bias voltage.

Paper Details

Date Published: 4 February 2013
PDF: 8 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86311K (4 February 2013); doi: 10.1117/12.2019103
Show Author Affiliations
A. M. Hoang, Northwestern Univ. (United States)
G. Chen, Northwestern Univ. (United States)
A. Haddadi, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

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