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Proceedings Paper

Heterodyne holographic nanometer alignment for a half-micron wafer stepper
Author(s): Kazuhiro Yamashita; Noboru Nomura; Keiji Kubo; Yuichirou Yamada; Masaki Suzuki
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Paper Abstract

Heterodyne Holographic Nanometer Alignment system has been applied in a halfmicron wafer stepperfor mass production usage to achieve the overlay accuracy within 0. 1 micron. Resultant overlay accuracy was successfully obtained within 63nm/3sigma for die by die alignment sequence and 8Onm/3sigma for multisampling global alignment sequence. A throughput of 50 6inch wafers per one hour was achieved for multi global alignment sequence. Alignment error budget was estimated for this alignment system and it was confirmed that total overlay accuracy of all processed wafers within 0. 1 micron for halfmicron photolithography was realized using Heterodyne Holographic Nanometer Alignmnent method. In addition onaxis TTR (Through The Reticle) alignment system was investigated for a future subhalf micron wafer stepper and the resul tant overlay accuracy was improved to be 55nm/3sigma. 1 .

Paper Details

Date Published: 1 June 1990
PDF: 8 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20190
Show Author Affiliations
Kazuhiro Yamashita, Matsushita Electric Industrial Co., Ltd. (Japan)
Noboru Nomura, Matsushita Electric Industrial Co., Ltd. (Japan)
Keiji Kubo, Matsushita Electric Industrial Co., Ltd. (Japan)
Yuichirou Yamada, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaki Suzuki, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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