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Proceedings Paper

AlN-based technology for deep UV and high-power applications
Author(s): Zlatko Sitar; Baxter Moody; S. Craft; Raoul Schlesser; Rafael F. Dalmau; Jinqiao Xie; Seiji Mita; T. Rice; J. Tweedy; J. LeBeau; Lindsay Hussey; Ramon Collazo; B. Gaddy; D. Irving
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Paper Details

Date Published:
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Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86251V; doi: 10.1117/12.2018966
Show Author Affiliations
Zlatko Sitar, North Carolina State Univ. (United States)
Baxter Moody, HexaTech, Inc. (United States)
S. Craft, HexaTech, Inc. (United States)
Raoul Schlesser, HexaTech, Inc. (United States)
Rafael F. Dalmau, HexaTech, Inc. (United States)
Jinqiao Xie, HexaTech, Inc. (United States)
Seiji Mita, HexaTech, Inc. (United States)
T. Rice, North Carolina State Univ. (United States)
J. Tweedy, North Carolina State Univ. (United States)
J. LeBeau, North Carolina State Univ. (United States)
Lindsay Hussey, North Carolina State Univ. (United States)
Ramon Collazo, North Carolina State Univ. (United States)
B. Gaddy, North Carolina State Univ. (United States)
D. Irving, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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