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Proceedings Paper

White light blinded IR photo-detection of a Si-based MIS structure with multi-dielectric layers
Author(s): Shing Wei Fang; H. J. Chen; Ming Chang Shih
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Paper Abstract

We demonstrate the fabrication of a white light blinded IR photo-detector sing a Si based metal insulator semiconductor (MIS) structure with multi-layers of SiO2/TiO2 dielectric and its characteristics of photo -responsivity. Spectral responsivity peak at 850 nm with high discrimination in visible light had been achieved in a MIS photo -detector with multiple layers of SiO2/TiO2 dielectrics. Reflection spectral measurements and I -V characteristics of the SiO2/TiO2 multi-layers with various layer number and thickness were used to explore the photo -detection in this MIS device structure. We found that high spectral discrimination of visible light of this multi-dielectric layers MIS device is due to the optical filtering property by these multi -layers and the mid-band gap impurity states existed at the interface between the Si substrate and these dielectric layers.

Paper Details

Date Published: 22 June 2013
PDF: 5 pages
Proc. SPIE 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 87691W (22 June 2013); doi: 10.1117/12.2018955
Show Author Affiliations
Shing Wei Fang, National Univ. of Kaohsiung (Taiwan)
H. J. Chen, Ubilux Technology Inc. (Taiwan)
Ming Chang Shih, National Univ. of Kaohsiung (Taiwan)

Published in SPIE Proceedings Vol. 8769:
International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013)
Chenggen Quan; Kemao Qian; Anand Asundi, Editor(s)

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