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Proceedings Paper

Multiple gain mechanisms integrated in APDs biased below breakdown for sensitivity improvement
Author(s): Samia Nawar Rahman; David Hall; Zhe Mei; Yu Hwa Lo
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Paper Abstract

Semiconductor photodetectors at1550nm wavelengths have been widely used in free space optical communications, sensing, infrared imaging, and quantum information processing. These detectors require high sensitivity with high detection efficiency and a large dynamic range. But for fundamental material and device limits, all these performances cannot be achieved in a single device under the same operating conditions. To overcome this bottleneck, we integrate three coupled gain mechanisms in a single element device, operating below breakdown to obtain a high net gain and at the same time utilize the negative feedback mechanism to minimize the gain fluctuation. This results in an improved signal to noise ratio, which is the key to obtaining a superior sensitivity. Integration of gain mechanisms in an InP-InGaAs device was analytically modeled and experimentally demonstrated.

Paper Details

Date Published: 29 May 2013
PDF: 10 pages
Proc. SPIE 8727, Advanced Photon Counting Techniques VII, 87270P (29 May 2013); doi: 10.1117/12.2018831
Show Author Affiliations
Samia Nawar Rahman, Univ. of California, San Diego (United States)
David Hall, Univ. of California, San Diego (United States)
Zhe Mei, Beijing Institute of Technology (China)
Univ. of California, San Diego (United States)
Yu Hwa Lo, Univ. of California, San Diego (United States)


Published in SPIE Proceedings Vol. 8727:
Advanced Photon Counting Techniques VII
Mark A. Itzler; Joe C. Campbell, Editor(s)

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