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Proceedings Paper

Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application
Author(s): Yegang Lu; Sannian Song; Zhitang Song; Yan Cheng; Liangcai Wu; Bo Liu
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Paper Abstract

Crystallization behavior of the Ge2Te3-TiO2 films prepared by the co-sputtering using Ge2Te3 and TiO2 targets was investigated by in situ resistance-temperature measurement and transmission electron microscopy. The crystallization kinetic parameters including rate factor and kinetics exponent were obtained by the non-isothermal change in resistance using Kissinger’s plot and Ozawa’s method. The average kinetics exponent was estimated by the nonisothermal change in resistance. Compared with other studied compositions, the composition with TiO2 concentration of 5 at.% exhibited shorter crystallization time which was calculated by the Johnson-Mehl-Avrami equation. The crystallization behavior of Ge2Te3-TiO2 film was verified by the transition electron microscopy at different annealing temperature. With the short crystallization time and high crystallization temperature, the compositions with TiO2 concentration of 5-15 at.% may be one of the competing candidates for phase change memory application.

Paper Details

Date Published: 24 January 2013
PDF: 6 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820K (24 January 2013); doi: 10.1117/12.2018637
Show Author Affiliations
Yegang Lu, Shanghai Institute of Microsystem and Information Technology (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Shanghai Institute of Technical Physics (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Yan Cheng, Shanghai Institute of Microsystem and Information Technology (China)
Liangcai Wu, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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