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Proceedings Paper

A write driver for phase change memory based on programming current/voltage
Author(s): Xi Fan; Houpeng Chen; WeiYi Xu; Qian Wang; Daolin Cai; Rong Jin; Xiao Hong; Xi Li; Yifeng Chen; ZhiTang Song
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Paper Abstract

A write driver for PCM is designed to improve reliability and bit yield in the write operation, due to the distributions during the phase change process. And the PCM cell can be injected by current or voltage respectively. Meanwhile, owing to the possible variations of the SET process parameters, the designed circuit can generate either multiple stepdown current pulse or multiple step-down voltage pulse. The circuit is developed based on SMIC 130 nm CMOS standard technology. Compared to the traditional constant current pulse programming, the test results show that the proposed multiple step-down current generator for SET operation can improve the uniformity of resistance and bit yield.

Paper Details

Date Published: 24 January 2013
PDF: 7 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 878215 (24 January 2013); doi: 10.1117/12.2018546
Show Author Affiliations
Xi Fan, Shanghai Institute of Microsystem and Information Technology (China)
Houpeng Chen, Shanghai Institute of Microsystem and Information Technology (China)
WeiYi Xu, Shanghai Institute of Microsystem and Information Technology (China)
Qian Wang, Shanghai Institute of Microsystem and Information Technology (China)
Daolin Cai, Shanghai Institute of Microsystem and Information Technology (China)
Rong Jin, Shanghai Institute of Microsystem and Information Technology (China)
Xiao Hong, Shanghai Institute of Microsystem and Information Technology (China)
Xi Li, Shanghai Institute of Microsystem and Information Technology (China)
Yifeng Chen, Shanghai Institute of Microsystem and Information Technology (China)
ZhiTang Song, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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