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Proceedings Paper

Schottky-barrier diode array fabrication with self-aligned Ni silicidation for low power phase-change memory application
Author(s): Yan Liu; Zhitang Song; Bo Liu; Houpeng Chen; Guanping Wu; Chao Zhang; Lianhong Wang; Lei Wang; Songlin Feng
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Paper Abstract

A high density design of Schottky-barrier diode array with self-aligned nickel-silicidation under 40nm technology node fabricated on epitaxial layer for low power phase-change memory application is proposed. According to N-type doping profile from simulation, large ON/OFF current ratio, the lower barrier height of ФB and series resistance RS are all determined by the dosage of buried N+ layer, epitaxial layer thickness. In addition, the temperature effect of the Schottky diode array is demonstrated by I-V electrical characteristics. From the optimal silicon-based results, a 9F2 16 × 16 diode array with the ideality factor of 1.21~1.40 shows a drive current density of ~14.9 mA/μm2, a Jon/Joff ratio of ~5.17×103, and crosstalk immunity. Furthermore, this calibrated physical model makes it possible to predict and improve the performance of accessing device array next generation for non-volatile memory application.

Paper Details

Date Published: 24 January 2013
PDF: 7 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 878213 (24 January 2013); doi: 10.1117/12.2018456
Show Author Affiliations
Yan Liu, Shanghai Institute of Microsystem and Information Technology (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Houpeng Chen, Shanghai Institute of Microsystem and Information Technology (China)
Guanping Wu, Semiconductor Manufacturing International Corp. (China)
Chao Zhang, Semiconductor Manufacturing International Corp. (China)
Lianhong Wang, Semiconductor Manufacturing International Corp. (China)
Lei Wang, Semiconductor Manufacturing International Corp. (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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