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Proceedings Paper

MWIR InAsSb barrier detector data and analysis
Author(s): A. I. D'Souza; E. Robinson; A. C. Ionescu; D. Okerlund; T. J. De Lyon; R. D. Rajavel; H. Sharifi; N. K. Dhar; P. S. Wijewarnasuriya; C. Grein
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Paper Abstract

Mid-wavelength infrared (MWIR) InAsSb alloy barrier detectors grown on GaAs substrates were characterized as a function of temperature to evaluate their performance. Detector arrays were fabricated in a 1024 × 1024 format on an 18 μm pitch. A fanout was utilized to directly acquire data from a set of selected detectors without an intervening read out integrating circuit (ROIC). The detectors have a cutoff wavelength equal to ~ 4.9 μm at 150 K. The peak internal quantum efficiency (QE) required a reverse bias voltage of 1 V. The detectors were diffusion-limited at the bias required to attain peak QE. Multiple 18 μm × 18 μm detectors were tied together in parallel by connecting the indium bump of each detector to a single large metal pad on the fanout. The dark current density at -1 V bias for a set of 64 × 64 and 6 × 6 array of detectors, each of which were tied together in parallel was ~ 10-3 A/cm2 at 200 K and 5 × 10-6 A/cm2 at 150 K. The 4096 (64 × 64) and 36 (6 × 6) detectors, both have similar Jdark vs Vd characteristics, demonstrating high operability and uniformity of the detectors in the array. The external QE measured using a narrow band filter centered at ~ 4 μm had values in the 65 – 70 % range. Since the detectors were illuminated through a GaAs substrate which has a reflectance of 29%, the internal QE is greater than 90 %. A 1024 × 1024 ROIC on an 18 μm pitch was also designed and fabricated to interface with the barrier detectors. QE at 150 K for a 1024 × 1024 detector array hybridized to a ROIC matched the QE measured on detectors that were measured directly through a fanout chip. Median D* at 150 K under a flux of 1.07 × 1015 ph/(cm2/s was 1.0 x 1011 cm Hz1/2 /W.

Paper Details

Date Published: 18 June 2013
PDF: 7 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041V (18 June 2013); doi: 10.1117/12.2018427
Show Author Affiliations
A. I. D'Souza, DRS Sensors & Targeting Systems, Inc. (United States)
E. Robinson, DRS Sensors & Targeting Systems, Inc. (United States)
A. C. Ionescu, DRS Sensors & Targeting Systems, Inc. (United States)
D. Okerlund, DRS Sensors & Targeting Systems, Inc. (United States)
T. J. De Lyon, HRL Labs., LLC (United States)
R. D. Rajavel, HRL Labs., LLC (United States)
H. Sharifi, HRL Labs., LLC (United States)
N. K. Dhar, DARPA/MTO (United States)
P. S. Wijewarnasuriya, U.S. Army Research Lab. (United States)
C. Grein, Univ. of Illinois at Chicago (United States)

Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

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