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Proceedings Paper

Mechanism of sensitivity of a three-collector magnetotransistor
Author(s): V. V. Amelichev; A. A. Cheremisinov; S. A. Polomoshnov; R. D. Tikhonov
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Paper Abstract

The sensitivity of bipolar magnetotransistor with the base in the well - 3CBМТBW has been studied. A low velocity of surface recombination and an extraction of the injected electrons by a base–well р-n junction determined operating mode with a deviation of two flows of charge carriers has been established. The voltage magnetosensitivity (~11 V/T) has been determined.

Paper Details

Date Published: 8 January 2013
PDF: 8 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000Q (8 January 2013); doi: 10.1117/12.2018388
Show Author Affiliations
V. V. Amelichev, Scientific-Manufacturing Complex "Technological Ctr.” (Russian Federation)
A. A. Cheremisinov, Scientific-Manufacturing Complex "Technological Ctr.” (Russian Federation)
S. A. Polomoshnov, Scientific-Manufacturing Complex "Technological Ctr.” (Russian Federation)
R. D. Tikhonov, Scientific-Manufacturing Complex "Technological Ctr.” (Russian Federation)

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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