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Proceedings Paper

Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation
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Paper Abstract

We report on our research in power scaling VECSEL around 1 μm to exceed 100W per chip. Recently, we have utilized these optimized VECSEL chips to achieve a new record for a mode-locked VECSEL. The output power of the laser was 3.4W. This corresponds to a pulse energy of 7.5nJ and a pulse peak power of 13.3kW. Both are record values for a semiconductor laser in the femtosecond regime. These optimized structures have also been used to demonstrate high power operation with a highly coherent TEM00 mode and to demonstrate a record single frequency output power of 15W.

Paper Details

Date Published: 23 May 2013
PDF: 7 pages
Proc. SPIE 8733, Laser Technology for Defense and Security IX, 873303 (23 May 2013); doi: 10.1117/12.2018310
Show Author Affiliations
Alexandre Laurain, College of Optical Sciences, Univ. of Arizona (United States)
Maik Scheller, College of Optical Sciences, Univ. of Arizona (United States)
Nonlinear Control Strategies Inc. (United States)
Tsuei-Lian Wang, College of Optical Sciences, Univ. of Arizona (United States)
Jorg Hader, College of Optical Sciences, Univ. of Arizona (United States)
Nonlinear Control Strategies Inc. (United States)
Jerome V. Moloney, College of Optical Sciences, Univ. of Arizona (United States)
Nonlinear Control Strategies Inc. (United States)
Bernd Heinen, Philipps Univ. Marburg (Germany)
Bernardette Kunert, Philipps Univ. Marburg (Germany)
NAsP III/V GmbH (Germany)
Wolfgang Stolz, Philipps Univ. Marburg (Germany)
NAsP III/V GmbH (Germany)


Published in SPIE Proceedings Vol. 8733:
Laser Technology for Defense and Security IX
Mark Dubinskii; Stephen G. Post, Editor(s)

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