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Proceedings Paper

Analysis of anomalous cells within RESET distribution for phase change memory
Author(s): Linhai Xu; Xiaogang Chen; Zhitang Song; Yifeng Chen; Bo Liu; Houpeng Chen; Zuoya Yang; Guanping Wu; Daolin Cai; Gaoming Feng; Ying Li
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Paper Abstract

Resistance distributions of the crystalline (SET) state and amorphous (RESET) state for phase change memory (PCM) are experimentally investigated at the array level. The RESET distribution shows a low resistance tail, which potentially affects the reading margin of the chip. These tail cells are divided into two types by resistance programming current (R-IP) and current voltage (I-V) characteristics. Finally, approaches of improving the integration process to remove the Type-1 tail cells and optimizing the programming operation to repair the Type-2 tail cells are proposed.

Paper Details

Date Published: 24 January 2013
PDF: 5 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 878212 (24 January 2013); doi: 10.1117/12.2018220
Show Author Affiliations
Linhai Xu, Shanghai Institute of Microsystem and Information Technology (China)
Xiaogang Chen, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Yifeng Chen, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Houpeng Chen, Shanghai Institute of Microsystem and Information Technology (China)
Zuoya Yang, Shanghai Institute of Microsystem and Information Technology (China)
Guanping Wu, Semiconductor Manufacturing International Corp. (China)
Daolin Cai, Shanghai Institute of Microsystem and Information Technology (China)
Gaoming Feng, Semiconductor Manufacturing International Corp. (China)
Ying Li, Semiconductor Manufacturing International Corp. (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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